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Properties of Glass as Related to Applications with Silicon


A. Introduction

In this paper some very general properties for silicon and several types of Corning glass are given. Many silicon wafer-users bond silicon to glass, or use glass materials in coordination with silicon. The glass data reported here has been taken from the Corning web site [1] and assumed to be accurate. Most the data on silicon can be located by reviewing a variety of textbooks, or the primary source given in reference 2. This Tech-note is intended to assist general silicon users with a quick reference to very basic glass properties and suppliers, and the reader should carefully review the Corning web site and other references as needed and appropriate.

B. Basic Data on Glass and Silicon

A basic listing of glass properties for Corning 7740 and 7070 glass is given below.

Corning 7740 Glass substrates
Diameter and Shape: 76.2mm ± 0.5mm, 100mm ± 0.5mm, 150mm± 0.5mm
Material Type: Borosilicate Glass
Primary Flat Length: SEMI Specification
Secondary Flat Length: SEMI Specification
Secondary Flat Orientation and Location: SEMI Specification
Center Thickness: 1000um +/- 25um, 500um +/- 25um standard
Total Thickness Variation (5 point measurement): <20um
Surface Polishing and Properties: Single Side or Double Side Polished
Density: 2.23 g/cm3
Youngs Modulus: 6.4e3 Kg/mm2
Poissons ratio: 0.2
Coefficient Thermal Expansion (0-300C): 3.25 e-6 1/C
Thermal conductivity: 0.0027 sec-cm2-C
Working Point: 1252 C
Softening Point: 820 C
Annealing Point: 560 C
Dielectric Constant: 4.6 @ 1MHz
Loss Tangent: 0.4% @ 1MHz Index of refraction: 1.474
Light Transmission: 90% at 300nm to 2700nm
Corning 7070 Glass Substrates
Diameter and Shape: 76.2mm ± 0.5mm, 100mm ± 0.5mm, 150mm± 0.5mm
Material Type: Lithia Potash Borosilicate Glass
Primary Flat Length: SEMI Specification
Secondary Flat Length: SEMI Specification
Secondary Flat Orientation and Location: SEMI Specification
Center Thickness: 1000um +/- 25um, 500um +/- 25um standard
Total Thickness Variation (5 point measurement): <20um
Surface Polishing and Properties: Single Side or Double Side Polished
Density: 2.13 g/cm3
Youngs Modulus: 5.2e3 Kg/mm2
Poissons ratio: 0.22
Coefficient Thermal Expansion: 3.2 e-6 1/C
Working Point: 1068 C
Annealing Point: 496 C
Dielectric Constant: 4.1 @ 1MHz
Loss Tangent: 0.06% @ 1MHz
Index of refraction: 1.47

 

A basic listing of the properties of silicon is given below. The reader should further review the VSI Technology Library (www.virginiasemi.com) for extensive details regarding silicon parameters, specifications, and characteristics.

 

CZ and FZ Silicon Substrates
The basic specifications for VSI CZ and FZ silicon wafers are given below.
Diameter and Shape: 25.4mm ± 0.3mm, 50.8mm ± 0.3mm, 76.2mm ± 0.3mm, 100mm ± 0.3mm, 150mm± 0.3mm
Material Type: Single Crystal CZ and FZ silicon
Primary Flat Length: SEMI Specification
Secondary Flat Length: SEMI Specification
Secondary Flat Orientation and Location: SEMI Specification
Center Thickness: SEMI Specification, or any thickness greater, or as thin as 10um
Total Thickness Variation (5 point measurement): SEMI Specification, or <1um
Surface Polishing and Properties: Single Side or Double Side Polished
Density: 2.33 g/cm3
Coefficient Thermal Expansion: 2.6e-6 1/C
Thermal conductivity: 1.5 W/cm-C
Melting Point: 1415 C
Annealing Point: 1250 C
Dielectric Constant: 11.9
Resistivity: .0006 to 5000 Ohm cm (engineered)

Light Transmission: Opaque in the visible

C. Summary

The basic properties of glass and silicon commonly used in the semiconductor industry have been presented.

D. References

[1] As of December 2003 see www.corning.com/lightingmaterials/images/wafersheet.pdf

 

[2] R. Hull [ Properties of Crystalline Silicon (INSPEC, London, 1999), EMIS Data Review Series, No. 20]


October 2003

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