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Growth Method
*
Cz
Fz
Dopant
*
Boron
Arsenic
Antimony
Phosphorous
Indium
N Type
Undoped
Any
Other
Other
Diameter
*
25.4 mm
50.8 mm
76.2 mm
100.0 mm
125.0 mm
150.0 mm
200.0 mm
Other
Other
Orientation
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<100>
<110>
<111>
Other
Other
TTV:
Finish Spec.
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Single Side Polished
Double Side Polished
Lapped
Crystal
As-Cut
Microns
< 10
< 5
< 2.5
< 2
< 1
ID & Aligning Flat
*
1 Flat
2 Flats
SEMI-Standard
None
Other
Other
Resistivity:
ohm-cm
Minimum
ohm-cm
Maximum
Center Thickness:
*
Microns
Edge Round ?
Yes
No
Micro-roughness (RMS)
*
≤0.5nm
≤1.8nm
N/A
Quantity:
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