Thermal Oxidation of Silicon (25.4-150mm Wafers)

Virginia Semiconductor, Inc. offers wet thermal oxidation of silicon substrates.  These layers are intended as etch masking layers, sacrificial layers, and basic electrical insulation layers.  Wafers ranging in diameter from 25 mm to 100 mm are oxidized at Virginia Semi.  Typical furnace temperatures are about 1100C.  Silicon wafers ranging in thickness from 50um to 25mm have been successfully oxidized.   Oxide thickness range is 250Å to about 5um.  The dry oxidation technique can be used for oxide layer thickness less than about 3000Å but Virginia Semi offers the wet process as the default.  Contact Virginia Semi directly for discussion and quotation of oxide layers greater than 4um.  Wafers with diameter greater than 100mm are thermally oxidized by a quality, sub-contractor. 

All pricing and services assume Virginia Semi supplied substrates, and the price for the substrate is not included below.   Pricing may vary depending on the exact wafer and oxide specification, as well as, variations in pricing with subcontractors on 150mm material.  Each batch price is for wafers of the same specification with the same oxidation layer. Multiple specifications or oxidation layers are charged as separate batches.

General pricing for thermal oxidation of wafers (silicon wafer price not included), diameters 25mm through 100mm follows:

General pricing for thermal oxidation of wafers (silicon wafer price not included), diameters 125-150mm follows:

Please contact VSI today for further information and assistance.

Thomas Digges, III, USA & International Sales, 540 373 2900 X17, digges@virginiasemi.com