Silicon Germanium

Virginia Semiconductor, Inc. can supply up to 2" diameter CZ grown Silicon-Germanium (SiGe) substrates in as-cut, lapped, or polished form and in a variety of crystallographic orientations. The highest Ge concentration presently available is 10%. The highest produced has been 20%. These compounds are produced using a VSI proprietary technique and will be grown to your specifications. Please request information on the silicon request form. To learn more about SiGe used in microelectronic applications visit www.sige.com