Phone - 540.373.2900
	SOI Wafers   Layer Grow Method Orientation Diameter Dopant Min. Resistivity Max. Resistivity Flat Spec Device Thickness Package Count Price          Device Cz <100> 100.0mm Boron 1 20 2 500±25 13 $1,300.00   Layer Grow Method Orientation   Dopant Min. Resistivity Max. Resistivity   Handle Thickness Total Thickness (microns)   Handle Cz <100>   Boron 1 20   525±25 Buy Now Buried Oxide Thickness = 20,000 The above SOI wafer package of 13, can be broken down and sold individually @ $125.00 each! Layer Grow Method Orientation Diameter Dopant Min. Resistivity Max. Resistivity Flat Spec Device Thickness Package Count Price          Device Cz <100> 100.0mm Boron 1 20 2 475±25 9 $900.00   Layer Grow Method Orientation   Dopant Min. Resistivity Max. Resistivity   Handle Thickness Total Thickness (microns)   Handle Cz <100>   Boron 1 20   525±25 Buy Now Buried Oxide Thickness = 20,000±10% The above SOI wafer package of 9, can be broken down and sold individually @ $125.00 each!   Back to Directory